Ion beam line

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United States of America Patent

PATENT NO 9142386
APP PUB NO 20140261171A1
SERIAL NO

13833668

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.

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Patent Owner(s)

  • NISSIN ION EQUIPMENT CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hahto, Sami K Nashua, US 22 308
Hamamoto, Nariaki Kyoto, JP 12 144
Igo, Tetsuya Kyoto, JP 7 69

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