THIN FILM PHOTOVOLTAIC DEVICE WTIH LARGE GRAIN STRUCTURE AND METHODS OF FORMATION
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Sep 18, 2014
app pub date -
Mar 13, 2014
filing date -
Mar 15, 2013
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Abstract
Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.
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