Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
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United States of America Patent
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May 19, 2015
Grant Date -
Sep 18, 2014
app pub date -
Jun 3, 2014
filing date -
Nov 1, 2012
priority date (Note) -
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Abstract
A fin field effect transistor including a plurality of fin structures on a substrate, and a shared gate structure on a channel portion of the plurality of fin structures. The fin field effect transistor further includes an epitaxial semiconductor material having a first portion between adjacent fin structures in the plurality of fin structures and a second portion present on outermost sidewalls of end fin structures of the plurality of fin structures. The epitaxial semiconductor material provides a source region and at drain region to each fin structure of the plurality of fin structures. A nitride containing spacer is present on the outermost sidewalls of the second portion of the epitaxial semiconductor material.
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