MONOLITHIC IGNITION INSULATED-GATE BIPOLAR TRANSISTOR

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20140264434A1
SERIAL NO

14212682

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

In a general aspect, an apparatus can include an insulated-gate bipolar transistor (IGBT) device disposed in a semiconductor region. The apparatus can further include a plurality of clamping diodes. The plurality of clamping diodes can be coupled in series between a collector terminal of the IGBT device and a gate terminal of the IGBT device. The apparatus can also include a gate pad disposed over at least a portion of the plurality of clamping diodes. The at least a portion of the plurality of clamping diodes can be configured, during operation of the apparatus, to have a voltage of at least 120 V applied across them.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
FAIRCHILD SEMICONDUCTOR CORPORATION5005 E MCDOWELL ROAD MAILDROP A700 PHOENIX AS 85008

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burton, Donald Forty Fort, US 1 0
REICHL, Dwayne S Pocono Lake, US 10 102
YEDINAK, Joseph A Mountain Top, US 63 1762

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation