MONOLITHIC IGNITION INSULATED-GATE BIPOLAR TRANSISTOR
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 14, 2014
filing date -
Mar 15, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In a general aspect, an apparatus can include an insulated-gate bipolar transistor (IGBT) device disposed in a semiconductor region. The apparatus can further include a plurality of clamping diodes. The plurality of clamping diodes can be coupled in series between a collector terminal of the IGBT device and a gate terminal of the IGBT device. The apparatus can also include a gate pad disposed over at least a portion of the plurality of clamping diodes. The at least a portion of the plurality of clamping diodes can be configured, during operation of the apparatus, to have a voltage of at least 120 V applied across them.
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