SELF-ALIGNED APPROACH FOR DRAIN DIFFUSION IN FIELD EFFECT TRANSISTORS
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 15, 2013
filing date -
Mar 15, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for doping terminals of a field-effect transistor (FET), the FET including a drain region, a source region, and a surround gate surrounding a channel region, the method including depositing a dopant-containing layer, such that the surround gate prevents the dopant-containing layer from contacting the channel region of the FET, the dopant-containing layer including a dopant. The dopant then diffuses the dopant from the dopant-containing layer into at least one of the drain region and source region of the FET.
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