Partially isolated fin-shaped field effect transistors
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United States of America Patent
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Apr 25, 2017
Grant Date -
Sep 18, 2014
app pub date -
Mar 14, 2013
filing date -
Mar 14, 2013
priority date (Note) -
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Abstract
A transistor device and a method for forming a fin-shaped field effect transistor (FinFET) device, with the channel portion of the fins on buried silicon oxide, while the source and drain portions of the fins on silicon. An example method includes receiving a wafer with a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer. The BOX layer is in physical contact with the silicon layer and the silicon substrate. The method further comprises implanting a well in the silicon substrate and forming vertical sources and drains over the well between dummy gates. The vertical sources and drains extend through the BOX layer, fins, and a portion of the dummy gates.
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