SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Mar 18, 2013
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Mar 18, 2013
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Abstract
The invention provides a semiconductor device, including: a substrate; a U-shaped gate dielectric layer formed on the substrate; and a dual work function metal gate layer on the inner surface of U-shaped gate dielectric layer, wherein the dual work function metal gate layer includes a first conductive type metal layer and a second conductive type metal layer.
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