Semiconductor device and method of forming an inductor on polymer matrix composite substrate
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United States of America Patent
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Jan 17, 2017
Grant Date -
Sep 18, 2014
app pub date -
May 28, 2014
filing date -
Oct 29, 2005
priority date (Note) -
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Abstract
A semiconductor device has a first insulating layer formed over a first surface of a polymer matrix composite substrate. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. The second conductive layer is wound to exhibit inductive properties. A third conductive layer is formed between the first conductive layer and second conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. A fourth insulating layer can be formed over a second surface of the polymer matrix composite substrate. Alternatively, the fourth insulating layer can be formed over the first insulating layer prior to forming the first conductive layer.
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