Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same

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United States of America Patent

PATENT NO 9230922
APP PUB NO 20140264778A1
SERIAL NO

14180907

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Abstract

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A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):

description='In-line Formulae' end='lead'HxSiAy(NR1R2)4-x-y  (1)description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'HxSi(NAR3)4-x  (2)description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'HxSi(R4)z(R5)4-x-z  (3)description='In-line Formulae' end='tail'

wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Soo-Jin Guri-Si, KR 30 357
Jeon, In-Sang Seoul, KR 16 2778
Kim, Bong-Hyun Incheon, KR 25 101
Lim, Han-Jin Seoul, KR 51 396
Nam, Seok-Woo Seongnam-si, KR 38 260
Shin, Dong-Woon Seongnam-si, KR 11 89

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