Selective self-reference read

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United States of America Patent

PATENT NO 9025364
APP PUB NO 20140269029A1
SERIAL NO

13804598

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Abstract

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This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresitive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinney, Wayne Emmett, US 99 3861
Sandhu, Gurtej S Boise, US 1217 32434

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