Methods and systems for verifying cell programming in phase change memory

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United States of America Patent

PATENT NO 9747977
SERIAL NO

13827825

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Abstract

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Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may further include sensing a threshold voltage of the phase change memory cell in response to applying first and second verify voltages across the phase change memory cell, where the second verify voltage is lower than the first verify voltage. The method may also include determining whether the threshold voltage of the phase change memory cell was below the first or second verify voltages.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Daniel J Folsom, US 9 80
Rivers, Doyle El Dorado Hills, US 28 176
Zeng, Raymond W Sunnyvale, US 23 365

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