METHOD OF FORMING DUAL GATE OXIDE
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Oct 17, 2013
filing date -
Mar 15, 2013
priority date (Note) -
Abandoned
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Abstract
A method of forming a dual gate oxide is disclosed which includes: providing a silicon substrate; depositing a first silicon oxide film over the silicon substrate; coating a photoresist over the first silicon oxide film; exposing and developing the photoresist to expose a portion of the first silicon oxide film; coating a crosslinking agent containing amine compound or polyamine compound on the photoresist and performing a heat curing process, thereby forming a protective layer of crosslinked macromolecules over the photoresist; removing the remaining crosslinking agent; performing a wet etching process to reduce a thickness of, or completely remove, the exposed portion of the first silicon oxide film; removing the photoresist and the protective layer formed thereon; and depositing a second silicon oxide film.
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