METHODS OF GAS DISTRIBUTION IN A CHEMICAL VAPOR DEPOSITION SYSTEM
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 14, 2013
filing date -
Mar 14, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of depositing an epitaxial layer on a silicon wafer is described. The silicon wafer has a diameter, and is disposed within a processing chamber within a deposition system. The method includes the steps of introducing a process gas into the system from a gas injecting port, flowing the process gas through a gas distribution plate in fluid communication with the gas injecting port and the processing chamber, the gas distribution plate including an inner array of holes and an outer array of holes, and controlling the gas flow distribution across the substrate surface. The controlling step includes selecting at least one orifice-containing plug to be secured within a hole in the gas distribution plate, and securing the selected plug within the hole.
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