PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
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United States of America Patent
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Issued Date -
Sep 25, 2014
app pub date -
Mar 19, 2014
filing date -
Mar 25, 2013
priority date (Note) -
Abandoned
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Abstract
There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.
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