REDUCING LOCALIZED HIGH ELECTRIC FIELDS IN PHOTOCONDUCTIVE WIDE BANDGAP SEMICONDUCTORS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 25, 2014
app pub date -
Mar 18, 2014
filing date -
Mar 15, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Methods, systems, and devices are disclosed for implementing a high voltage variable resistor. In one aspect, an optical transconductance variable resistor includes a photoconductive wide bandgap semiconductor material (PWBSM) substrate, whose conduction response to changes in amplitude of incident radiation that is substantially linear throughout a non-saturation region thereof, whereby the material is operable in non-avalanche mode as a variable resistor, and first and second electrodes in contact with the material so that: a first triple junction boundary region is formed between the PWBSM substrate and the first electrode, and a second triple junction boundary region is formed between the PWBSM substrate and the second electrode, and the PWBSM substrate is located within an internal triple junction region formed between the first and second triple junction boundary regions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully