Resistance random access memory device

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United States of America Patent

PATENT NO 9202846
APP PUB NO 20140284536A1
SERIAL NO

13954169

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Abstract

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A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arayashiki, Yusuke Kanagawa-ken, JP 37 112
Sugimae, Kikuko Kanagawa-ken, JP 101 914

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