Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

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United States of America Patent

PATENT NO 9159769
APP PUB NO 20140284540A1
SERIAL NO

14018906

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Abstract

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According to one embodiment, a semiconductor device comprises a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode. The variable resistance element comprises an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Suguro, Kyoichi Yokohama, JP 159 4047

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