Resistance random access memory device

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United States of America Patent

PATENT NO 9082973
APP PUB NO 20140284543A1
SERIAL NO

14022732

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A resistance random access memory device according to an embodiment includes a first electrode, a second electrode, and a variable resistance portion placed between the first electrode and the second electrode. The variable resistance portion includes a first insulating layer, a second insulating layer, and a crystal layer that is placed between the first insulating layer and the second insulating layer, has a higher resistivity than the first electrode, and is crystalline.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Shosuke Kanagawa-ken, JP 67 926
Ishikawa, Takayuki Kanagawa-ken, JP 160 1478
Miyagawa, Hidenori Kanagawa-ken, JP 31 198
Saitoh, Masumi Kanagawa-ken, JP 95 894
Tanaka, Hiroki Kanagawa-ken, JP 348 2275

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