Resistance change memory element and resistance change memory

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United States of America Patent

PATENT NO 9153779
APP PUB NO 20140284546A1
SERIAL NO

14022478

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Abstract

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According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ariga, Tomotaka Mie-ken, JP 14 394
Matsuo, Kouji Aichi-ken, JP 80 1437
Oomachi, Noritake Tokyo, JP 24 171
Ozawa, Yoshio Kanagawa-ken, JP 269 4932
Wada, Junichi Mie-ken, JP 92 1123

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