Semiconductor device and method of fabricating the same
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United States of America Patent
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Sep 22, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 10, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
An aspect of the present embodiment, there is provided a semiconductor device, including a first electrode, a first semiconductor layer having a first conductive type connected to the first electrode, a second semiconductor layer having a second conductive type contacted to the first semiconductor layer, a third semiconductor layer having the first conductive type, an impurity concentration of the third semiconductor layer being smaller than an impurity concentration of the second semiconductor layer, the third semiconductor layer contacting to the second semiconductor layer to be separated from the first semiconductor layer by the second semiconductor layer, a gate insulator provided on the second semiconductor layer, and the first semiconductor layer and the third semiconductor layer arranged at both sides of the second semiconductor layer, respectively, a gate electrode on the gate insulator; and a second electrode connected to the third semiconductor layer.
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