SiC epitaxial wafer and semiconductor device

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United States of America Patent

PATENT NO 8933464
APP PUB NO 20140284619A1
SERIAL NO

14205792

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Abstract

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An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus) when the p-type impurity is the element A and the n-type impurity is the element D. The ratio of the concentration of the element D to the concentration of the element A in the combination(s) is higher than 0.33 but lower than 1.0.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishio, Johji Tokyo, JP 90 1266
Ota, Chiharu Kanagawa, JP 55 275
Shimizu, Tatsuo Tokyo, JP 285 2223
Shinohe, Takashi Kanagawa, JP 168 1539

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