Nitride semiconductor light emitting device
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United States of America Patent
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Dec 15, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 2, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
A nitride semiconductor light emitting device includes a laminate, first and second electrodes, a conductive layer, and a phosphor layer. The laminate includes a first layer including a first electroconductive-type layer, a second layer including a second electroconductive-type layer, a light emitting layer between the first and second layers, and a nitride semiconductor. The laminate has a recessed portion extending from the first layer to the second layer in a central portion or an outer peripheral portion. The first electrode arranged on the first layer reflects light emitted from the light emitting layer. The second electrode is surrounded by the light emitting layer or on the periphery thereof and connected to a bottom surface of the recessed portion. The conductive layer is arranged on a surface of the second layer at a side opposite to the light emitting layer. The phosphor layer overlies the second layer and the conductive layer.
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