Nonvolatile semiconductor memory device
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United States of America Patent
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May 26, 2015
Grant Date -
Sep 25, 2014
app pub date -
Aug 2, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
According to one embodiment, a device includes a fin type active area on a semiconductor substrate, the active area having an upper surface with a taper shape, having a width in a first direction, and extending in a second direction intersect with the first direction, a first insulating layer on the active area, a charge storage layer on the first insulating layer, the charge storage layer having an upper surface with a taper shape, a second insulating layer covering the upper surface of the charge storage layer, and a control gate electrode on the second insulating layer, the control gate electrode extending in the first direction.
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