Nonvolatile semiconductor memory device and method for manufacturing the same
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United States of America Patent
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Apr 14, 2015
Grant Date -
Sep 25, 2014
app pub date -
Aug 30, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
In general, according to one embodiment, a nonvolatile semiconductor memory device includes a memory cell region and a peripheral region. The memory cell region includes first element isolation regions, first semiconductor regions, a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate electrode. The first element isolation regions separate a semiconductor layer and include a first insulating film. The first semiconductor regions are separated by the first element isolation regions. The peripheral region includes a second element isolation region a second insulating film. Each of the first element isolation regions includes a first and a second portion. A step is present between the first and the second portion. At least part of a side surface and a lower end of the second element isolation region are surrounded by the semiconductor layer.
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