Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9129858
APP PUB NO 20140284698A1
SERIAL NO

14015017

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Abstract

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A semiconductor device includes a memory cell transistor that is formed via a first gate insulating film on an active region of a memory cell region and has a gate electrode including a first charge storage layer, a first interelectrode insulating film, and a first control gate electrode film. A transistor, which includes a second gate insulating film on the active region or a peripheral circuit region and a gate electrode including a second charge storage layer, a second interelectrode insulating film, and a second control gate electrode film, is also provided. A groove with a funnel shape is formed in a trap film of the second charge storage layer, and the second control gate electrode film and the polysilicon film of the second charge storage layer are interconnected via the groove.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagashima, Satoshi Mie, JP 95 480

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