Semiconductor device

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United States of America Patent

PATENT NO 8981462
APP PUB NO 20140284700A1
SERIAL NO

14017231

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Abstract

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According to one embodiment, a semiconductor device includes a semiconductor layer having an opening formed therein, a first insulating layer disposed on a bottom surface of the opening and on a sidewall of the opening, a second insulating layer disposed on the sidewall of the opening above the first insulating layer, the second insulating layer being thinner than the first insulating layer, a field plate electrode disposed on the first insulating layer and the second insulating layer and having a recess extending from an upper surface of the field plate electrode towards the bottom surface of the opening, and a first layer disposed in the recess and including a material that is different from a material of the field plate electrode.

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First Claim

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nozu, Tetsuro Tokyo, JP 18 167

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