Semiconductor device
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United States of America Patent
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May 24, 2016
Grant Date -
Sep 25, 2014
app pub date -
Apr 7, 2014
filing date -
Sep 29, 2011
priority date (Note) -
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Abstract
A semiconductor device comprising: a Metal Oxide Semiconductor Field Effect Transistor including: a semiconductor substrate including a first semiconductor layer of a first conductivity type; second semiconductor layers of a second conductivity type extending in a depth direction from one surface of the semiconductor substrate, and having space each other; a first diode including a fifth semiconductor layer of the second conductivity type contacting the second semiconductor layer in one surface side of the semiconductor substrate, the first semiconductor layer and the second semiconductor layers; and an anode of the second diode connected to an anode of the first diode.
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