Importance

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Abstract

According to one embodiment, in a method of manufacturing a semiconductor device, a plurality of first impurity layers of a second conductivity type are formed. A first epitaxial layer of a first conductivity type is formed. A plurality of second impurity layers of a second conductivity type are formed. Thereafter, a second epitaxial layer of a first conductivity type having a smaller thickness than the first epitaxial layer is formed. The first impurity layers of a second conductivity type and the second impurity layers of a second conductivity type are bonded to each other by heat treatment thus forming a plurality of pillar layers of a second conductivity type. A second semiconductor layer of a second conductivity type which is brought into contact with the pillar layers of a second conductivity type is formed over a surface of the second epitaxial layer.

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First Claim