Semiconductor structure with deep trench thermal conduction

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United States of America Patent

PATENT NO 9252242
APP PUB NO 20140284717A1
SERIAL NO

13849694

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Abstract

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Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Haran, Balasubramanian Pranatharthi Watervliet, US 5 13
Li, Junjun Williston, US 153 1555
Ponoth, Shom Clifton Park, US 240 3542
Standaert, Theodorus Eduardus Clifton Park, US 29 328
Yamashita, Tenko Schenectady, US 599 4947

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