Self-aligned bipolar junction transistors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8927381
SERIAL NO

13847695

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Device structures, fabrication methods, and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harame, David L Essex Junction, US 86 853
Liu, Qizhi Lexington, US 213 1352

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 6, 2026
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00