SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20140284799A1
SERIAL NO

14202017

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device has a substrate a lower layer wiring on the substrate, an interlayer dielectric on the lower layer wiring having a contact hole, a catalyst metal layer at the bottom of the contact hole having catalyst metal particles, multi-walled carbon nanotubes on the catalyst metal layer passing through the contact hole, and an upper layer wiring on the multi-walled carbon nanotubes. The multi-walled carbon nanotubes are intercalated with an atomic or molecular species.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1050023 ?1050023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KATAGIRI, Masayuki Kanagawa, JP 103 1972
MIYAZAKI, Hisao Kanagawa, JP 36 63
SAKAI, Tadashi Kanagawa, JP 166 1895
SUZUKI, Mariko Kanagawa, JP 93 1852
YAMAZAKI, Yuichi Tokyo, JP 75 846

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