SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 25, 2014
app pub date -
Jul 10, 2013
filing date -
Mar 22, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, there is provided a semiconductor device including a first capacitance electrode, a second capacitance electrode, and a depletion layer. The first capacitance electrode is buried in a hole via an insulating film. The hole is formed in a semiconductor substrate. The second capacitance electrode is formed on a front surface side or on a back surface side of the semiconductor substrate so as to be separated from the first capacitance electrode. The depletion layer forming mechanism includes a control electrode, and forms a depletion layer between the first capacitance electrode and the second capacitance electrode.
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