Nonvolatile semiconductor memory device and method of controlling the same

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United States of America Patent

PATENT NO 9093143
APP PUB NO 20140286079A1
SERIAL NO

14016487

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A control circuit, on selecting a memory cell as a selected memory cell to perform a write operation, before executing the write operation, applies a first voltage to the selected memory cell via a first line and a second line to perform a first read operation. The control circuit, when judged that a result of the first read operation does not match write data intended to be written, executes the write operation. The control circuit, when judged that a result of the first read operation matches write data intended to be written, omits a voltage application operation for the write operation.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Domae, Sumiko Yokohama, JP 7 6
Iwata, Yoshihisa Yokohama, JP 188 4389

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