Memory arrays and methods of forming same

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United States of America Patent

PATENT NO 9343670
APP PUB NO 20140291604A1
SERIAL NO

14268587

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Abstract

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Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having a looped feature using a self-aligning multiple patterning technique, and forming a first sealing material over the looped feature. A first chop mask material is formed over the first sealing material. The looped feature and the first sealing material are removed outside the first chop mask material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pellizzer, Fabio Cornate D'Adda, IT 313 3154
Rigano, Antonino Pioltello, IT 28 119

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