Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication

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United States of America Patent

PATENT NO 8969948
APP PUB NO 20140291747A1
SERIAL NO

13852988

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Abstract

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A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Parat, Krishna K Palo Alto, US 85 1249
Simsek-Ege, Fatma A Boise, US 7 95

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