Asymmetric Spacers
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United States of America Patent
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Issued Date -
Oct 2, 2014
app pub date -
Mar 29, 2013
filing date -
Mar 29, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device having asymmetric spacers and steps for forming the same are disclosed. The spacers have difference capacitances, with the spacer having a higher capacitance formed over a source region of the device and the spacer having a lower capacitance formed over a drain region of the device. Embodiments of the disclosed invention include spacers made from different materials, having different or substantially equal thicknesses.
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