SEMICONDUCTOR DEVICE HEAT DISSIPATION USING HIGH THERMAL CONDUCTIVITY DIELECTRIC LAYER
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United States of America Patent
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Issued Date -
Oct 2, 2014
app pub date -
Mar 24, 2014
filing date -
Mar 26, 2013
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Abandoned
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Abstract
Semiconductor devices are disclosed including a bulk substrate, an epitaxial collector layer, an epitaxial base layer, an epitaxial emitter layer and an electrical insulator layer in direct thermal contact with at least a portion of the base layer, emitter layer, and/or collector layer. At least a portion of the electrical insulator layer has high thermal conductivity properties, which can provide for dissipation of undesirable thermal energy through the electrical insulator layer.
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