Nonvolatile semiconductor memory having a word line bent towards a select gate line side

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United States of America Patent

PATENT NO 8994180
APP PUB NO 20140293694A1
SERIAL NO

14301102

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Abstract

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A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kamigaichi, Takeshi Yokohama, JP 90 1540
Kawabata, Itaru Yokohama, JP 25 267
Murata, Takeshi Yokohama, JP 74 441

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