Signal margin centering for single-ended eDRAM sense amplifier
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United States of America Patent
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Jul 28, 2015
Grant Date -
Oct 2, 2014
app pub date -
Mar 27, 2013
filing date -
Mar 27, 2013
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Abstract
Apparatus and methods for signal margin centering for single-ended eDRAM sense amplifier. A plurality of DRAM cells is connected to an input side of a multiplexer by a first bitline. A single-ended sense amplifier is connected to an output side of the multiplexer by a second bitline. The single-ended sense amplifier has a switch voltage. The second bitline is precharged to a selected voltage level. The multiplexer passes a signal voltage from a selected one of the plurality of DRAM cells to the second bitline. The selected voltage level is selected such that reception of the signal voltage of a first type adjusts a voltage of the second bitline in a first direction and reception of the signal voltage of a second type adjusts the voltage of the second bitline in a second direction opposite from the first direction, centering the signal voltage around the switch voltage.
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