Photoelectric conversion apparatus and imaging system having impurity concentration profile in a depth direction of the plural semiconductor regions
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United States of America Patent
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Jan 5, 2016
Grant Date -
Oct 9, 2014
app pub date -
Apr 4, 2014
filing date -
Apr 8, 2013
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Abstract
A photoelectric conversion unit has first semiconductor regions and a second semiconductor region that is disposed between the first semiconductor regions being adjacently disposed in the unit. Impurity concentration profile in a depth direction of the first and semiconductor regions has a plurality of peaks. The impurity concentration peaks of the first semiconductor region include a first impurity concentration peak and a second impurity concentration peak being lower than the first impurity concentration peak. The impurity concentration peaks of the second semiconductor region include a third, a fourth, and a fifth impurity concentration peak. The fourth impurity concentration peak is higher than the third impurity concentration peak, and a fifth impurity concentration peak is higher than the third impurity concentration peak. The depth of the third impurity concentration peak is closer to the depth of the second impurity concentration peak than that of the first impurity concentration peak.
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