Semiconductor device and method of forming conductive vias using backside via reveal and selective passivation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Mar 21, 2014
filing date -
Apr 8, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a plurality of semiconductor die and a plurality of conductive vias formed in the semiconductor die. An insulating layer is formed over the semiconductor die while leaving the conductive vias exposed. An interconnect structure is formed over the insulating layer and conductive vias. The insulating layer is formed using electrografting or oxidation. An under bump metallization is formed over the conductive vias. A portion of the semiconductor die is removed to expose the conductive vias. The interconnect structure is formed over two or more of the conductive vias. A portion of the semiconductor die is removed to leave the conductive vias with a height greater than a height of the semiconductor die. A second insulating layer is formed over the first insulating layer. A portion of the second insulating layer is removed to expose the conductive via.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully