Vertical cross point reram forming method
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United States of America Patent
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Dec 1, 2015
Grant Date -
Oct 9, 2014
app pub date -
Apr 5, 2014
filing date -
Apr 5, 2013
priority date (Note) -
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Abstract
Methods for forming non-volatile storage elements in a non-volatile storage system are described. In some embodiments, a plurality of forming operations may be performed in which non-volatile storage elements located near the far end of a plurality of word line fingers associated with a word line comb are formed prior to forming other non-volatile storage elements. In one example, non-volatile storage elements may be formed in each of the plurality of word line fingers in parallel and in an order that forms non-volatile storage elements in each of the plurality of word line fingers that are located near the far ends of the plurality of word line fingers before forming other non-volatile storage elements. Each non-volatile storage element that is formed during a forming operation may be current limited while a forming voltage is applied across the non-volatile storage element.
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