Magnetic memory, spin element, and spin MOS transistor

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United States of America Patent

PATENT NO 9230625
SERIAL NO

14204422

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Abstract

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A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inokuchi, Tomoaki Yokohama, JP 102 1202
Ishikawa, Mizue Yokohama, JP 44 524
Saito, Yoshiaki Kawasaki, JP 211 3679
Sugiyama, Hideyuki Kawasaki, JP 117 1430
Takashima, Akira Tokyo, JP 130 2677
Tanamoto, Tetsufumi Kawasaki, JP 59 823

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