PLASMA CLEANING METHOD
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United States of America Patent
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Issued Date -
Oct 9, 2014
app pub date -
Nov 15, 2013
filing date -
Apr 9, 2013
priority date (Note) -
Abandoned
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Abstract
A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ RF nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem.
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