Charge storage nodes with conductive nanodots

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United States of America Patent

PATENT NO 9202700
APP PUB NO 20140302648A1
SERIAL NO

14309186

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Abstract

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Methods of forming memory cells having conductive nanodots over a charge storage material are useful in non-volatile memory devices and electronic systems.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramaswamy, Nirmal Boise, US 72 1183

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