METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION
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United States of America Patent
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Issued Date -
Oct 9, 2014
app pub date -
Apr 9, 2014
filing date -
Dec 9, 2009
priority date (Note) -
Abandoned
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Abstract
Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.
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