Semiconductor device

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United States of America Patent

PATENT NO 9041173
APP PUB NO 20140306239A1
SERIAL NO

14315394

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Abstract

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A semiconductor device includes a first conduction type semiconductor substrate, a first conduction type semiconductor deposition layer, a trench, second conduction type wells, a JFET region, a first conduction type first source region, a first source region, a trench-type source electrode, a gate insulator film, a gate electrode, and a drain electrode. The trench is formed substantially perpendicularly to the semiconductor deposition layer so that the semiconductor deposition layer exposes to a bottom of the trench. The second conduction type second source region are formed in the first conduction type first source region. The trench-type source electrode is in contact with the first source region, the second source region, and the first conduction type semiconductor deposition layer to configure a Schottky junction.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mizukami, Makoto Kanagawa-ken, JP 77 1489

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