Self-aligned structure for bulk FinFET

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United States of America Patent

PATENT NO 8940602
SERIAL NO

13860832

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Abstract

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A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. Also disclosed is a method for forming a FinFET device.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schnectady, US 487 4269
Leobandung, Effendi Wappingers Falls, US 536 4748
Yamashita, Tenko Schenectady, US 599 4947
Yeh, Chun-Chen Clifton Park, US 417 3455

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