TRENCH FORMATION METHOD AND A SEMICONDUCTOR STRUCTURE THEREOF
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United States of America Patent
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Oct 16, 2014
app pub date -
Mar 27, 2014
filing date -
Apr 12, 2013
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Abstract
In one embodiment, a method of making a trench for a semiconductor device can include: (i) providing a semiconductor substrate; (ii) forming a patterned hard mask layer with an opening on the semiconductor substrate, where a thickness of the patterned hard mask layer is from about 100 nm to about 400 nm; and (iii) using the patterned hard mask layer as a mask, and etching the semiconductor substrate to form the trench in the semiconductor substrate.
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